2SC3836 silicon npn epitaxial ade-208-1092 (z) 1st. edition mar. 2001 application low frequency amplifier, switching outline 1. emitter 2. collector 3. base spak 1 2 3
2SC3836 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 15 v collector current i c 300 ma collector power dissipation p c 300 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 60v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 50v i c = 1 ma, r be = emitter to base breakdown voltage v (be)ebo 15v i e = 10 m a, i c = 0 collector cutoff current i cbo 1 m av cb = 50 v, i e = 0 base to emitter voltage v be 0.75 v v ce = 6 v, i c = 1 ma dc current transfer ratio h fe1 800 2000 v ce = 6 v, i c = 100 ma (pulse test) h fe2 500 v ce = 6 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) 0.3 v i c = 300 ma, i b = 30 ma (pulse test)
2SC3836 3 maximum collector dissipation curve ambient temperature ta ( c) collector power dissipation p c (mw) 200 300 100 0 50 100 150 typical output characteristics 50 40 30 20 10 04 collector to emitter voltage v ce (v) collector current i c (ma) 8 2610 10 15 20 25 i b = 5 m a dc current transfer ratio vs. collector current collector current i c (ma) dc current transfer ratio h fe 10,000 2,000 1,000 500 200 100 50 2 20 200 100 10 5 50 500 5,000 v ce = 6 v pulse saturation voltage vs. collector current 1.0 0.1 0.01 0.001 0.1 1.0 100 10 collector current i c (ma) collector to emitter saturation voltage v ce(sat) (v) base to emitter saturation voltage v be(sat) (v) i c = 10 i b pulse v ce(sat) v be(sat)
2SC3836 4 gain bandwidth product vs. collector current collector current i c (ma) gain bandwidth product f t (mhz) 1,000 200 100 50 20 10 5 2 20 200 100 10 5 50 500 500 v ce = 6 v pulse collector output capacitance vs. collector to base voltage 100 50 20 10 5 2 1.0 0.5 collector to base voltage v cb (v) collector output capacitance c ob (pf) 0.2 2 20 10 1.0 5 50 0.5 f = 1 mhz i e = 0
2SC3836 5 package dimensions hitachi code jedec eiaj mass (reference value) spak 0.10 g 4.2 max 0.6 max 0.45 0.1 1.27 1.27 2.54 2.2 max 0.4 0.1 0.6 1.8 max 14.5 min 3.2 max as of january, 2001 unit: mm
2SC3836 6 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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